1N5338B(2012) 查看數據表（PDF） - ON Semiconductor
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1N5338B Datasheet PDF : 7 Pages
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1N53 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Symbol
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
IR
Reverse Leakage Current @ VR
VR
Breakdown Voltage
IF
Forward Current
VF
Forward Voltage @ IF
IR
Maximum Surge Current @ TA = 25°C
DVZ
Reverse Zener Voltage Change
IZM
Maximum DC Zener Current
I
IF
VZ VR
V
IIRZT VF
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Device†
(Note 2)
Device
Marking
Zener Voltage (Note 3)
VZ (Volts)
@ IZT
Min Nom Max mA
Zener Impedance (Note 3)
ZZT @ IZT ZZK @ IZK IZK
W
W
mA
Leakage
Current
IR @ VR
mA Max Volts
IR
(Note 4)
A
DVZ
(Note 5)
Volts
IZM
(Note 6)
mA
1N5333B
1N5334B
1N5335B
1N5336B
1N5337B
1N5333B 3.14 3.3 3.47 380
3
1N5334B 3.42 3.6 3.78 350
2.5
1N5335B 3.71 3.9 4.10 320
2
1N5336B 4.09 4.3 4.52 290
2
1N5337B 4.47 4.7 4.94 260
2
400
1 300
1
20
0.85
1440
500
1 150
1
18.7
0.8
1320
500
1
50
1
17.6
0.54
1220
500
1
10
1
16.4
0.49
1100
450
1
5
1
15.3
0.44
1010
1N5338B
1N5339B
1N5340B
1N5341B
1N5342B
1N5338B 4.85 5.1 5.36 240
1.5
1N5339B 5.32 5.6 5.88 220
1
1N5340B 5.70 6.0 6.30 200
1
1N5341B 5.89 6.2 6.51 200
1
1N5342B 6.46 6.8 7.14 175
1
400
1
1
1
14.4
0.39
930
400
1
1
2
13.4
0.25
865
300
1
1
3
12.7
0.19
790
200
1
1
3
12.4
0.1
765
200
1
10
5.2 11.5
0.15
700
1N5343B
1N5344B
1N5345B
1N5346B
1N5347B
1N5343B 7.13 7.5 7.88 175
1.5
1N5344B 7.79 8.2 8.61 150
1.5
1N5345B 8.27 8.7 9.14 150
2
1N5346B 8.65 9.1 9.56 150
2
1N5347B 9.50 10 10.5 125
2
200
1
10
5.7 10.7
0.15
630
200
1
10
6.2
10
0.2
580
200
1
10
6.6
9.5
0.2
545
150
1
7.5
6.9
9.2
0.22
520
125
1
5
7.6
8.6
0.22
475
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
2. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of ±5%.
3. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK): Test conditions for zener voltage and impedance are as follows: IZ is applied
40 ±10 ms prior to reading. Mounting contacts are located 3/8″ to 1/2″ from the inside edge of mounting clips to the body of the diode
(TA = 25°C +8°C, −2°C).
4. SURGE CURRENT (IR): Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width,
PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between
1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in
Figure 6. Mounting contact located as specified in Note 2 (TA = 25°C +8°C, −2°C).
5. VOLTAGE REGULATION (DVZ): The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50%
of the IZ max value listed in the electrical characteristics table. The test current time duration for each VZ measurement is 40 ±10 ms. Mounting
contact located as specified in Note 2 (TA = 25°C +8°C, −2°C).
6. MAXIMUM REGULATOR CURRENT (IZM): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,
it applies only to the B−suffix device. The actual IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device.
TL = 25°C at 3/8″ maximum from the device body.
†The “G’’ suffix indicates Pb−Free package or Pb−Free packages are available.
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