AM29LV640DU120RZIN(2007) 查看數據表（PDF） - Advanced Micro Devices

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AM29LV640DU120RZIN
(Rev.:2007)

64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO™ Control

Advanced Micro Devices 

DATA SHEET

Am29LV640D/Am29LV641D

64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only

Uniform Sector Flash Memory with VersatileIO™ Control

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— 3.0 to 3.6 volt read, erase, and program operations

■ VersatileIO™ control

— Device generates output voltages and tolerates data

input voltages on the DQ input/outputs as determined

by the voltage on VIO

■ High performance

— Access times as fast as 90 ns

■ Manufactured on 0.23 µm process technology

■ CFI (Common Flash Interface) compliant

— Provides device-specific information to the system,

allowing host software to easily reconfigure for

different Flash devices

■ SecSi (Secured Silicon) Sector region

— 128-word sector for permanent, secure identification

through an 8-word random Electronic Serial Number

— May be programmed and locked at the factory or by

the customer

— Accessible through a command sequence

■ Ultra low power consumption (typical values at 3.0 V,

5 MHz)

— 9 mA typical active read current

— 26 mA typical erase/program current

— 200 nA typical standby mode current

■ Flexible sector architecture

— One hundred twenty-eight 32 Kword sectors

■ Sector Protection

— A hardware method to lock a sector to prevent

program or erase operations within that sector

— Sectors can be locked in-system or via programming

equipment

— Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically writes

and verifies data at specified addresses

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-power

supply Flash

— Superior inadvertent write protection

■ Minimum 1 million erase cycle guarantee per sector

■ Package options

— 48-pin TSOP (Am29LV641DH/DL only)

— 56-pin SSOP (Am29LV640DH/DL only)

— 63-ball Fine-Pitch BGA (Am29LV640DU only)

— 64-ball Fortified BGA (Am29LV640DU only)

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from, or

program data to, a sect27

— or that is not being erased, then resumes the erase

operation

■ Data# Polling and toggle bits

— Provides a software method of detecting program or

erase operation completion

■ Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

■ Ready/Busy# pin (RY/BY#) (Am29LV640DU in FBGA

package only)

— Provides a hardware method of detecting program or

erase cycle completion

■ Hardware reset pin (RESET#)

— Hardware method to reset the device for reading array

data

■ WP# pin (Am29LV641DH/DL in TSOP,

Am29LV640DH/DL in SSOP only)

— At VIL, protects the first or last 32 Kword sector,

regardless of sector protect/unprotect status

— At VIH, allows removal of sector protection

— An internal pull up to VCC is provided

■ ACC pin

— Accelerates programming time for higher throughput

during system production

■ Program and Erase Performance (VHH not applied to

the ACC input pin)

— Word program time: 11 µs typical

— Sector erase time: 0.9 s typical for each 32 Kword

sector

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 22366 Rev: C Amendment 6

Issue Date: January 22, 2007

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