11N60F 查看數據表（PDF） - Fairchild Semiconductor
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11N60F Datasheet PDF : 10 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. V = 0 V
GS
2.
I
D
=
250
µA
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 9-1. Safe Operating Area
for FCP11N60F
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. V = 10 V
GS
2. I = 5.5 A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 9-2. Safe Operating Area
for FCPF11N60F
102 Operation in This Area
is Limited by R
DS(on)
101
100
100 us
1 ms
10 ms
DC
102 Operation in This Area
is Limited by R
DS(on)
101
100
100 us
1 ms
10 ms
100 ms
DC
* Notes :
10-1
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
* Notes :
10-1
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
10-2
100
101
102
103
V , Drain-Source Voltage [V]
DS
10-2
100
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 10. Maximum Drain Current vs. Case Temperature
12.5
10.0
7.5
5.0
2.5
0.0
25
50
75
100
125
150
T , Case Temperature [oC]
C
4
FCP11N60F/FCPF11N60F Rev. A
www.fairchildsemi.com
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