ULN2003AG 查看數據表（PDF） - ON Semiconductor

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ULN2003AG

High Voltage, High Current Darlington Transistor Arrays

ON Semiconductor 

ULN2003A, ULQ2003A

MAXIMUM RATINGS (TA = 25°C, and rating apply to any one device in the package, unless otherwise noted.)

Rating

Symbol

Value

Unit

Output Voltage

Input Voltage

Collector Current - Continuous

Base Current - Continuous

Operating Ambient Temperature Range

ULN2003A

ULQ2003A

VO

50

V

VI

30

V

IC

500

mA

IB

25

mA

TA

°C

-20 to +85

-40 to +85

Storage Temperature Range

Junction Temperature

Thermal Resistance, Junction-to-Ambient

Case 751B, D Suffix

Tstg

TJ

RqJA

-55 to +150

150

100

°C

°C

°C/W

Thermal Resistance, Junction-to-Case

Case 751B, D Suffix

RqJC

°C/W

20

Electrostatic Discharge Sensitivity (ESD)

Human Body Model (HBM)

Machine Model (MM)

Charged Device Model (CDM)

ESD

V

2000

400

1500

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

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