2SC2344 查看數據表（PDF） - SavantIC Semiconductor
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2SC2344 Datasheet PDF : 5 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Base-emitter breakdown voltage
IC=10mA ,RBE=:
V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA
VBE
Base-emitter voltage
IC=10mA ; VCE=5V
ICBO
Collector cut-off current
VCB=120V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE
DC current gain
IC=0.3A ; VCE=5V
fT
Transition frequency
IC=50mA ; VCE=10V
Cob
Output capacitance
f=1MHz ; VCB=10V
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=0.5A IB1=- IB2=50mA
hFE Classifications
D
E
60-120
100-200
Product Specification
2SC2344
MIN TYP. MAX UNIT
160
V
180
V
6
V
0.3
V
1.5
V
10
µA
10
µA
60
200
100
MHz
23
pF
0.15
µs
0.81
µs
0.48
µs
2
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