2N930A 查看數據表（PDF） - Continental Device India Limited
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2N930A Datasheet PDF : 4 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTORS
2N930
2N930A
TO-18
Metal Can Package
Low Noise Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
2N930
45
45
5
30
300
1.72
600
3.42
- 65 to +200
2N930A
60
60
6
UNIT
V
V
V
mA
mW
mW/ ºC
mW
mW/ ºC
ºC
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
Rth (j-a)
Rth (j-c)
583
ºC/W
292
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
*VCEO
IC=10mA, IB=0
Collector Base Voltage
VCBO
IC=10µA, IE=0
Emitter Base Voltage
VEBO
IE=10µA, IC=0
Collector Cut Off Current
ICBO
VCB=45V, IE=0
Collector Cut Off Current
ICEO
VCE=5V, IB=0
Emitter Cut Off Current
IEBO
VEB=5V, IC=0
Collector Cut Off Current
ICES
VCE=45V, VBE=0
VCE=45V, VBE=0, Ta=170ºC
Collector Emitter Saturation Voltage *VCE (sat)
IC=10mA, IB=0.5mA
Base Emitter Saturation Voltage
*VBE (sat)
IC=10mA, IB=0.5mA
DC Current Gain
hFE
IC=1µA, VCE=5V
IC=10µA, VCE=5V
IC=10µA, VCE=5V, Ta= -55ºC
IC=500µA, VCE=5V
*IC=10mA, VCE=5V
2N930
>45
>45
>5
<10
<2
<10
<10
<10
<1.0
0.7 - 0.9
100-300
>20
>150
<600
2N930A UNIT
>60
V
>60
V
>6
V
<2
nA
<2
nA
<2
nA
<2
nA
<2
µA
<0.5 V
0.7 - 0.9 V
>60
100-300
>30
<600
*Pulse Test: Pulse width <300µs, Duty cycle< 2%
Continental Device India Limited
Data Sheet
Page 1 of 4
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