2SK2008 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SK2008

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK2008

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

250

Gate to source breakdown

voltage

V(BR)GSS

±30

Gate to source leak current IGSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off)

2.0

Static drain to source on state RDS(on)

—

resistance

Forward transfer admittance |yfs|

9.0

Typ

—

—

—

—

—

0.12

14

Max

—

—

±10

250

3.0

0.15

—

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note 1. Pulse Test

2340 —

1000 —

160 —

30

—

125 —

190 —

100 —

1.2

—

120 —

Unit

V

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS =200 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 10 A

VGS = 10 V*1

ID = 10 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 10 A

VGS = 10 V

RL = 3 Ω

IF = 20 A, VGS = 0

IF = 20 A, VGS = 0,

diF / dt = 100 A / µs

See chracteristic curves of 2SK2007

3

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