0790_XP162A01B5PR 查看數據表（PDF） - TOREX SEMICONDUCTOR
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0790_XP162A01B5PR Datasheet PDF : 4 Pages
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XP162A01B5PR
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
10000
Vgs=0V, f=1MHz
1000
100
10
0
Ciss
Coss
Crss
-5
-10
-15
-20
Drain-Source Voltage:Vds (V)
SWITCHING TIME vs. DRAIN CURRENT
1000
Vgs=-5V, Vdd≒-10V, PW=10µsec. duty≤1%
tf
100
td（off）
tr
10
td（on）
1
-0.01
-0.1
-1
-10
Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
Vds=-10V, Id=-2A
-10
-8
-6
-4
-2
0
0
5
10
15
Gate Charge:Qg (nc)
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Pulse Test
-6
-5
Vgs＝-4.5V
-4
-3
-2.5V
-2
-1
0,4.5V
0
0
-0.2
-0.4
-0.6
-0.8
-1
Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a)=62.5˚C/W, (Implemented on a ceramic PCB)
10
1
Single Pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
Pulse Width:PW (sec)
10
100
11
873
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