BCR1AM-8 查看數據表（PDF） - MITSUBISHI ELECTRIC
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BCR1AM-8 Datasheet PDF : 5 Pages
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GATE CHARACTERISTICS
101
7
5
3
VGM = 6V
2
PGM =
1W
PG(AV)
= 0.1W
100
7
5
3
2
IFGT I
IRGT I
IRGT III
10–1
7
5
3
2
IGM = 1A
IFGT III
VGD = 0.1V
10–2
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
4
3
2
VFGT I, VRGT I
102
7
5
4
3
VRGT III, VFGT III
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
2.0
1.6
1.2
360°
CONDUCTION
0.8
RESISTIVE,
INDUCTIVE
LOADS
0.4
0
0 0.4 0.8 1.2 1.6 2.0
RMS ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM-8
LOW POWER USE
PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
4
3
IFGT III
2
102
7 IFGT I IRGT I IRGT III
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
103
7
5
3
2
JUNCTION TO AMBIENT
102
7
5
3
JUNCTION TO CASE
2
101
7
5
3
2
100
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
120
100
80
360°
CONDUCTION
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS ON-STATE CURRENT (A)
Feb.1999
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