BCR1AM-8 查看數據表（PDF） - MITSUBISHI ELECTRIC

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BCR1AM-8

TRIAC LOW POWER USE PLANAR PASSIVATION TYPE

MITSUBISHI ELECTRIC  

COMMUTATION CHARACTERISTICS

101

7 TYPICAL EXAMPLE

5

4

3

TC = 125°C

IT = 1A

τ = 500µs

VD = 200V

2

MINIMUM III QUADRANT

100

CHARAC-

TERISTICS

7

VALUE

5

4

3

I QUADRANT

2

10–110–1 2 3 4 5 7 100 2 3 4 5 7 101

RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A/ms)

GATE TRIGGER CHARACTERISTICS

TEST CIRCUITS

6Ω

6Ω

6V

A

6V

A

V

RG

V

RG

TEST PROCEDURE 1 TEST PROCEDURE 2

6Ω

6Ω

6V

A

6V

A

V

RG

V

RG

TEST PROCEDURE 3 TEST PROCEDURE 4

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR1AM-8

LOW POWER USE

PLANAR PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

GATE CURRENT PULSE WIDTH

103

7

TYPICAL EXAMPLE

5

4

3

2

102

7

IFGT I

5

IRGT III

4

3

IRGT I

IFGT III

2

101100 2 3 4 5 7 101 2 3 4 5 7 102

GATE CURRENT PULSE WIDTH (µs)

Feb.1999

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