DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

RHR1K160 查看數據表(PDF) - Intersil

零件编号
产品描述 (功能)
生产厂家
RHR1K160
Intersil
Intersil Intersil
RHR1K160 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
RHR1K160
Test Circuits and Waveforms (Continued)
L = 20mH
R < 0.1
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
LR
CURRENT
SENSE
Q1
+
VDD
DUT
VDD
-
FIGURE 11. AVALANCHE ENERGY TEST CIRCUIT
Thermal Resistance vs Mounting Pad Area
The maximum rated junction temperature, TJM, and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, PDM, in an
application. Therefore the application’s ambient temperature,
TA (oC), and thermal resistance RθJA (oC/W) must be
reviewed to ensure that TJM is never exceeded. Equation 1
mathematically represents the relationship and serves as
the basis for establishing the rating of the part.
PDM = -(--T----J-Z--M--θ----J–---A-T----A----)
(EQ. 1)
In using surface mount devices such as the SO-8 package,
the environment in which it is applied will have a significant
influence on the part’s current and maximum power
dissipation ratings. Precise determination of the PDM is
complex and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Intersil provides thermal information to assist the designer’s
preliminary application evaluation. Figure 13 defines the
RθJA for the device as a function of the top copper
(component side) area. This is for a horizontally positioned
FR-4 board with 2 oz. copper after 1000 seconds of steady
state power with no air flow. This graph provides the
necessary information for calculation of the steady state
VAVL
IL
IL
IV
t0
t1
t2
t
FIGURE 12. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
junction temperature or power dissipation. Pulse
applications can be evaluated using the Intersil device Spice
thermal model or manually utilizing the normalized maximum
transient thermal impedance curve.
350
ln RθJA = 101.6 - 25.82 x (AREA)
300
250
200
217oC/W - 0.0123in2
150
177oC/W - 0.054in2
100
50
0.001
0.01
0.1
1.0
CATHODE MOUNTING AREA, TOP COPPER AREA (in2)
FIGURE 13. THERMAL RESISTANCE vs MOUNTING PAD
AREA
Displayed on the curve are RθJA values listed in the
Electrical Specifications table. These points were chosen to
depict the compromise between the copper board area, the
thermal resistance and ultimately the power dissipation,
PDM. Thermal resistances corresponding to other
component side copper areas can be obtained from Figure
13 or by calculation using Equation 2. The area, in square
inches is the top copper area including the cathode pad
area.
RθJA = 101.6 25.82 × ln (Area)
(EQ. 2)
3-5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]