IS42S16400(2008) 查看數據表（PDF） - Integrated Silicon Solution

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IS42S16400
(Rev.:2008)

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Silicon Solution 

IS42S16400

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameters

Rating

Unit

VDD max

Maximum Supply Voltage

–1.0 to +4.6

V

VDDq max

Maximum Supply Voltage for Output Buffer

–1.0 to +4.6

V

Vin

Input Voltage

–1.0 to Vddq + 0.5 V

Vout

Output Voltage

–1.0 to Vddq + 0.5 V

Pd max

Allowable Power Dissipation

1

W

Ics Output Shorted Current

50

mA

Topr

Operating Temperature

Com.

Ind.

0 to +70

°C

-40 to +85

°C

Tstg

Storage Temperature

–65 to +150

°C

DC RECOMMENDED OPERATING CONDITIONS(2) (At Ta = 0 to +70°C)

Symbol

VDD, VDDq

Vih

Vil

Parameter

Supply Voltage

Input High Voltage(3)

Input Low Voltage(4)

Min.

3.0

2.0

-0.3

Typ.

Max.

Unit

3.3

3.6

V

—

Vdd + 0.3

V

—

+0.8

V

CAPACITANCE CHARACTERISTICS(1,2) (At Ta = 0 to +25°C, Vdd = Vddq = 3.3 ± 0.3V, f = 1 MHz)

Symbol Parameter

Typ. Max. Unit

Cin

Input Capacitance: Address and Control

—

3.8

pF

Cclk

Input Capacitance: (CLK)

—

3.5

pF

CI/O

Data Input/Output Capacitance: I/O0-I/O15

—

6.5

pF

Notes:

1.  Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

2.  All voltages are referenced to GND.

3. Vih(max) = Vddq + 2.0V with a pulse width < 3ns.

4. Vil(min) = GND - 2.0V with a pulse width < 3ns.

Integrated Silicon Solution, Inc. — www.issi.com

11

Rev.  D

01/30/08

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