4C14400-70 查看數據表（PDF） - Alliance Semiconductor

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4C14400-70

1M-bit × 4 CMOS DRAM (Fast page mode or EDO)

Alliance Semiconductor 

AS4C14400

Fast page mode cycle

Symbol Parameter

Read-write cycle time

tPC

(fast page)

tCAP

Access time from CAS precharge

tCP

CAS precharge time

(fast page)

tPCM Fast page mode RMW cycle

tCRW

Page mode CAS pulse width

(RMW)

tRASP RAS pulse width

Shaded areas contain advance information.

®

-40

Min Max

-50

Min Max

-60

Min Max

-70

Min Max

Unit Notes

30 – 35 – 40 – 45 – ns 14

– 25 – 30 – 35 – 40 ns 13

5

– 10 – 10 – 10 – ns

65 – 76 – 85 – 96 – ns

45 – 54 – 60 – 69 – ns

40 100K 50 100K 60 100K 70 100K ns

Refresh cycle

Symbol Parameter

tCSR

CAS setup time (CAS-before-RAS)

tCHR CAS hold time (CAS-before-RAS)

tRPC

RAS precharge to CAS hold time

tCPT

CAS precharge time

(CAS-before-RAS counter test)

Shaded areas contain advance information.

-40

Min Max

10 –

10 –

0

–

5

–

-50

Min Max

10 –

10 –

0

–

10 –

-60

Min Max

10 –

15 –

0

–

10 –

-70

Min Max

10 –

15 –

0–

10 –

Unit Notes

ns 3

ns 3

ns

ns

Output enable

Std

Symbol Parameter

tROH RAS hold time referenced to OE

tOEA

OE access time

tOED OE to data delay

Output buffer turnoff delay

tOEZ

from OE

tOEH OE command hold time

Shaded areas contain advance information.

-40

Min Max

5

–

– 10

10 –

– 10

10 –

-50

Min Max

10 –

– 13

13 –

– 13

13 –

-60

Min Max

10 –

– 15

15 –

– 15

15 –

-70

Min Max

10 –

– 18

18 –

– 18

18 –

Unit Notes

ns

ns

ns

ns 8, 10

ns

6

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