W986416CH 查看數據表（PDF） - Winbond

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W986416CH

1M x 16 bit x 4 Banks SDRAM

Winbond 

W986416CH

Features

• 3.3V±0.3V power supply

• Up to 166 MHz clock frequency

• 1,048,576 words x 4 banks x 16 bits organization

• Auto Refresh and Self Refresh

• CAS latency: 2 and 3

• Burst Length: 1, 2, 4, 8 , and full page

• Burst read, Single Writes Mode

• Byte data controlled by UDQM and LDQM

• Power-Down Mode

• Auto-Precharge and controlled precharge

• 4k refresh cycles / 64ms

• Interface: LVTTL

• Package: TSOP II 54 pin, 400 mil - 0.80

1M x 16 bit x 4 Banks SDRAM

General Description

W986416CH is a high speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x

16 bits. Using pipelined architecture and 0.20um process technology, W986416CH delivers a data bandwidth of up to 332M

bytes per second (-6). For different application, W986416CH is sorted into four speed grades: -6, -7, -75 and -8H. The -6 parts

can run up to 166Mhz/CL3. The -7 parts can run up to 143Mhz/CL3 specification. The -75 parts can run up to PC133/CL3

specification. The -8H parts can run up to 125Mhz/CL3 or PC100/CL2 specification.

Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of

1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated

by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock

cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.

By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst

to maximize its performance. W986416CH is ideal for main memory in high performance applications.

Key Parameters

Symbol

Description

tCK

Clock Cycle Time

tAC Access Time from CLK

tRP Precharge to Active Command

tRCD Active to Read/Write Command

ICC1 Operation Current ( Single bank )

ICC4 Burst Operation Current

ICC6 Self-Refresh Current

min/max

min

max

min

min

max

max

max

-6

6ns

5ns

18ns

18ns

80mA

130mA

1mA

-7

7ns

5.4ns

20ns

20ns

65mA

115mA

1mA

-75(PC133)

7.5ns

5.4ns

20ns

20ns

65mA

115mA

1mA

-8H(PC100)

8ns

6ns

20ns

20ns

60mA

110mA

1mA

Revision 1.2

Publication Release Date: June, 1999

-1-

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