10BQ040-M3 查看數據表（PDF） - Vishay Semiconductors
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10BQ040-M3 Datasheet PDF : 6 Pages
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160
150
140
D = 0.75
DC
D = 0.50
130
D = 0.33
D = 0.25
120
D = 0.20
110
100
Square wave (D = 0.50)
90 80 % rated VR applied
80 see note (1)
70
0.0
0.3
0.6
0.9
1.2
1.5
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
1000
VS-10BQ040-M3
Vishay Semiconductors
0.8
D = 0.75
D = 0.50
0.6 D = 0.33
D = 0.25
D = 0.20
0.4
RMS limit
0.2
DC
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
IF(AV) - Average Forward Current (A)
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
100
At any rated load condition and
with rated VRRM applied
following surge
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 29-May-12
4
Document Number: 93335
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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