10MQ040 查看數據表（PDF） - International Rectifier
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10MQ040 Datasheet PDF : 7 Pages
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10MQ040N
Bulletin PD-20518 rev. N 07/04
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
10MQ040N
40
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
* See Fig. 4
IFSM Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6
EAS Non-Repetitive Avalanche Energy
IAR Repetitive Avalanche Current
10MQ Units
Conditions
1.5
A 50% duty cycle @ TL = 123 °C, rectangular wave form.
On PC board 9mm2 island(.013mm thick copper pad area)
120
5µs Sine or 3µs Rect. pulse Following any rated
A
load condition and
30
10ms Sine or 6ms Rect. pulse with rated VRRM applied
3.0
mJ TJ = 25 °C, IAS = 1A, L = 6mH
1.0
A
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop (1)
* See Fig. 1
IRM Max. Reverse Leakage Current (1)
* See Fig. 2
VF(TO) Threshold Voltage
rt Forward Slope Resistance
CT Typical Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Voltage Rate of Change
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
10MQ Units
Conditions
0.54
0.62
0.49
0.56
0.5
26
0.36
104
38
2.0
10000
V
V
V
V
mA
mA
V
mΩ
pF
nH
V/µs
@ 1A
@ 1.5A
@ 1A
@ 1.5A
TJ = 25 °C
TJ = 125 °C
TJ = TJ max.
TJ = 25 °C
TJ = 125 °C
VR = rated VR
VR = 10VDC, TJ = 25°C, test signal = 1Mhz
Measured lead to lead 5mm from package body
Thermal-Mechanical Specifications
Parameters
10MQ Units
Conditions
TJ Max. Junction Temperature Range (*) - 55 to 150 °C
Tstg Max. Storage Temperature Range - 55 to 150 °C
RthJA Max. Thermal Resistance Junction
to Ambient
80 °C/W
DC operation
wt Approximate Weight
0.07(0.002) g (oz.)
Case Style
SMA
Similar D-64
Device Marking
IR1F
(*) dPtot
dTj
<
1
Rth( j-a)
thermal runaway condition for a diode on its own heatsink
2
www.irf.com
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