10MQ060-M3(2011) 查看數據表（PDF） - Vishay Semiconductors
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10MQ060-M3 Datasheet PDF : 6 Pages
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VS-10MQ060-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
VF(TO)
rt
CT
LS
dV/dt
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
1A
1.5 A
1A
1.5 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz
Measured lead to lead 5 mm from package body
Rated VR
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
TJ (1), TStg
RthJA
DC operation
Approximate weight
Marking device
Case style SMA (similar D-64)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES
0.63
0.71
0.57
0.63
0.5
7.5
0.45
86.8
31
2.0
10 000
UNITS
V
mA
V
m
pF
nH
V/μs
VALUES
- 55 to 150
UNITS
°C
80
°C/W
0.07
g
0.002
oz.
1H
Revision: 22-Aug-11
2
Document Number: 93351
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