11DQ06TR 查看數據表（PDF） - Vishay Semiconductors
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11DQ06TR Datasheet PDF : 5 Pages
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11DQ05, 11DQ06
Schottky Rectifier, 1.1 A Vishay High Power Products
10
100
T J = 25˚C
T J = 150˚C
1
T J = 125˚C
T J = 25˚C
0.1
0 0.2 0.4 0.6 0.8 1 1.2
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
0 10 20 30 40 50 60 70
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
160
140
120
DC
100
80
60 Square wave (D = 0.50)
80% Rated Vr applied
40
20 see note (1)
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Average Forward Current - IF(AV) (A)
Fig. 4 - Maximum Ambient Temperature vs.
Average Forward Current, Printed Circuit Board Mounted
100
10
T J = 150˚C
1
125˚C
0.1
0.8
D = 0.20
D = 0.25
D = 0.33
0.6 D = 0.50
D = 0.75
0.4 RMS Limit
DC
0.01
25˚C
0.2
0.001
0.0001
0
10 20 30 40 50 60 70
Reverse Voltage - VR(V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Document Number: 93206
Revision: 06-Nov-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
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