VS-11DQ06TR-M3 查看數據表（PDF） - Vishay Semiconductors
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VS-11DQ06TR-M3 Datasheet PDF : 6 Pages
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VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3
www.vishay.com
Vishay Semiconductors
10
T = 150 °C
1
T = 125 °C
T = 25 °C
0.1
0
0.2 0.4
0.6 0.8
1 1.2
93206_01
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
10 TJ = 150° C
1
TJ = 125° C
0.1
0.01
0.001
TJ = 25° C
0.0001
0 10 20 30 40 50 60 70
93206_02
VR - Reverse Voltage (V)
Fig. 2 - - Typical Values of Reverse Current vs.
Reverse Voltage
100
TJ = 25 °C
160
140
120
DC
100
80
60 Square wave (D = 0.50)
80 % Rated VR applied
40
20 see note (1)
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
93206_04
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Ambient Temperature vs.
Average Forward Current, Printed Circuit Board Mounted
0.8
D = 0.20
D = 0.25
D = 0.33
0.6
D = 0.50
D = 0.75
0.4 RMS Limit
DC
0.2
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
93206_05
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
1000
At Any Rated Load Condition
And With rated VRRM Applied
Following Surge
100
TJ = 25 °C
10
0 10 20 30 40 50 60 70
10
10
100
1000
10 000
93206_03
VR - Reverse Voltage (V)
Fig. 3 - - Typical Junction Capacitance vs.
Reverse Voltage
93206_06
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 21-Sep-11
3
Document Number: 93206
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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