VS-11DQ09TR 查看數據表（PDF） - Vishay Semiconductors
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VS-11DQ09TR Datasheet PDF : 6 Pages
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VS-11DQ09, VS-11DQ09-M3, VS-11DQ10, VS-11DQ10-M3
www.vishay.com
Vishay Semiconductors
10
T = 150 °C
1
T = 125 °C
T = 25 °C
0.1
0
0.4
0.8
1.2
1.6
93207_01
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
1
0.1
0.01
TJ = 150 °C
TJ = 125 °C
0.001
0.0001
TJ = 25 °C
0
0
20
40
60
80
100
93207_02
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
150
120
DC
90
60
Square wave (D = 0.50)
80 % Rated VR applied
30
see note (1)
0
0
0.3
0.6
0.9
1.2
1.5
93207_04
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Ambient Temperature vs.
Average Forward Current
D = 0.20
0.8
D = 0.25
D = 0.33
D = 0.50
0.6
D = 0.75
RMS Limit
DC
0.4
0.2
0
0
0.3
0.6
0.9
1.2
1.5
93207_05
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
100
TJ = 25 °C
10
0
20
40
60
80
100
93207_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
At Any Rated Load Condition
And With rated VRRM Applied
Following Surge
10
10
100
1000
10 000
93207_06
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 21-Sep-11
3
Document Number: 93207
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