15TQ060STRLPBF 查看數據表（PDF） - Vishay Semiconductors
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15TQ060STRLPBF Datasheet PDF : 6 Pages
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15TQ060S
Vishay High Power Products
Schottky Rectifier, 15 A
Base
cathode
2
D2PAK
1
N/C
3
Anode
PRODUCT SUMMARY
IF(AV)
15 A
VR
60 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
Rectangular waveform
IFSM
tp = 5 µs sine
VF
15 Apk, TJ = 125 °C
TJ
Range
FEATURES
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for Q101 level
DESCRIPTION
The 15TQ060SPbF Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
VALUES
15
60
1000
0.56
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
15TQ060S
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
See fig. 5
IF(AV) 50 % duty cycle at TC = 104 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
See fig. 7
5 µs sine or 3 µs rect. pulse
Following any rated
IFSM
load condition and with
10 ms sine or 6 ms rect. pulse rated VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
TJ = 25 °C, IAS = 1.5 A, L = 11.5 mH
Current decaying linearly to zero in 1 µs
IAR
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
15
1000
260
6
1.50
UNITS
A
A
mJ
A
Document Number: 93948
Revision: 25-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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