180RKI80PBF 查看數據表（PDF） - Vishay Semiconductors

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180RKI80PBF

Phase Control Thyristors (Stud Version), 180 A

Vishay Semiconductors 

180RKI...PbF, 181RKI...PbF Series

Phase Control Thyristors Vishay High Power Products

(Stud Version), 180 A

TRIGGERING

PARAMETER

Maximum peak gate power

Maximum average gate power

Maximum peak positive gate current

Maximum peak positive gate voltage

Maximum peak negative gate voltage

DC gate current required to trigger

DC gate voltage required to trigger

DC gate current not to trigger

DC gate voltage not to trigger

SYMBOL

PGM

PG(AV)

IGM

+ VGM

- VGM

IGT

VGT

IGD

VGD

TEST CONDITIONS

TJ = TJ maximum, tp ≤ 5 ms

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp ≤ 5 ms

TJ = - 40 °C

TJ = 25 °C

TJ = 125 °C

TJ = - 40 °C

TJ = 25 °C

TJ = 125 °C

TJ = TJ maximum

Maximum required gate trigger/

current/voltage are the lowest

value which will trigger all units

12 V anode to cathode applied

Maximum gate current/voltage not

to trigger is the maximum value

which will not trigger any unit with

rated VDRM anode to cathode

applied

VALUES

TYP. MAX.

10

2.0

3.0

20

5.0

130 -

65 150

35

-

2.0

-

1.2 2.5

0.9

-

UNITS

W

A

V

mA

V

10

mA

0.25

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum operating junction

temperature range

TJ

Maximum storage temperature range

Maximum thermal resistance,

junction to case

TStg

RthJC

DC operation

Maximum thermal resistance,

junction to ambient

RthCS

Mounting surface, smooth, flat and greased

Mounting force, ± 10 %

Non-lubricated threads

Lubricated threads

Approximate weight

Case style

See dimensions - link at the end of datasheet

VALUES UNITS

- 40 to 125

°C

- 40 to 150

0.15

K/W

0.04

31

(275)

24.5

(210)

N·m

(lbf · in)

280

g

TO-209AB (TO-93)

ΔRthJC CONDUCTION

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180°

0.050

0.032

120°

0.063

0.059

90°

0.080

60°

0.118

0.082

0.124

TJ = TJ maximum

K/W

30°

0.225

0.228

Note

• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Document Number: 94382

Revision: 03-Nov-09

For technical questions, contact: indmodules@vishay.com

www.vishay.com

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