1MBI200HH-120L-50 查看數據表（PDF） - Fuji Electric
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1MBI200HH-120L-50 Datasheet PDF : 7 Pages
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1MBI200HH-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
1000
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=3.1Ω, Tj=25oC
1000
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=3.1Ω, Tj=125oC
toff
ton
100
tr
tf
10
0
100
200
300
Collector current : IC [ A ]
10000
Switching time vs. Gate resistance (typ.)
VCC=600V, IC=200A, VGE=±15V, Tj=25oC
1000
toff
ton
tr
100
tf
10
1
10
100
Gate resistance : RG [ Ω ]
Switching loss vs. Gate resistance (typ.)
VCC=600V, IC=200A, VGE=±15V, Tj=125oC
50
Eon
40
30
Eoff
20
10
0
1
Err
10
100
Gate resistance : RG [ Ω ]
4
toff
ton
100
tr
tf
10
0
100
200
300
Collector current : IC [ A ]
Switching loss vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=3.1Ω
12
10
Eoff(125°C)
Eoff(25°C)
8
6
Err(125°C)
Eon(125°C)
4
Err(25°C)
Eon(25°C)
2
0
0
50
100
150
200
250
Collector current : IC [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 3.1Ω,Tj <= 125oC
500
400
300
200
100
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]
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