1N1184 查看數據表（PDF） - Microsemi Corporation
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1N1184 Datasheet PDF : 3 Pages
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
Qualified per MIL-PRF-19500/297
• Glass Passivated Die
• Glass to Metal Seal Construction
• 500 Amps Surge Rating • VRRM to 1000 Volts
DEVICES
1N1184
1N1186
1N1188
1N1190
1N3766
1N3768
1N1184R
1N1186R
1N1188R
1N1190R
1N3766R
1N3768R
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Peak Reverse Voltage
1N1184
1N1186
1N1188
1N1190
1N3766
1N3768
1N1184R
1N1186R
1N1188R
1N1190R
1N3766R
1N3768R
Average Forward Current, TC = 150°
Peak Surge Forward Current @ tp = 8.3ms, half sinewave,
TC = 150°C
Thermal Resistance, Junction to Case
Operating Case Temperature Range
Storage Temperature Range
Symbol
VR
IF
IFSM
RθJC
Tj
TSTG
Value
100
200
400
600
800
1000
35
500
0.8
-65°C to 175°C
-65°C to 175°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Forward Voltage
IFM = 110A, TC = 25°C*
Forward Voltage
IFM = 500A, TC = 150°C*
Reverse Current
VRM = 100, Tj = 25°C
VRM = 200, Tj = 25°C
VRM = 400, Tj = 25°C
VRM = 600, Tj = 25°C
VRM = 800, Tj = 25°C
VRM = 1000, Tj = 25°C
Reverse Current
VRM = 100, Tj = 150°C
VRM = 200, Tj = 150°C
VRM = 400, Tj = 150°C
VRM = 600, Tj = 150°C
VRM = 800, Tj = 150°C
VRM = 1000, Tj = 150°C
1N1184
1N1186
1N1188
1N1190
1N3766
1N3768
1N1184
1N1186
1N1188
1N1190
1N3766
1N3768
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
Symbol
VFM
VFM
1N1184R
1N1186R
1N1188R
1N1190R
IRM
1N3766R
1N3768R
1N1184R
1N1186R
1N1188R
1N1190R
IRM
1N3766R
1N3768R
Min.
Max.
1.4
2.3
10
1
Note:
Unit
V
A
A
°C/W
°C
°C
Unit
V
V
μA
mA
DO-203AB (DO-5)
T4-LDS-0138 Rev. 1 (091729)
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