1N1185 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

生产厂家

1N1185

Power Silicon Rectifier Diodes, 35 A/40 A/60 A

Vishay Semiconductors 

1N1183, 1N3765, 1N1183A, 1N2128A Series

Power Silicon Rectifier Diodes, Vishay High Power Products

35 A/40 A/60 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

1N1183 1N3765 1N1183A 1N2128A UNITS

Maximum operating

case temperature range

TC

Maximum storage

temperature range

TStg

- 65 to 190 (1)

- 65 to 200

°C

- 65 to 175 (1)

- 65 to 200

Maximum internal thermal

resistance, junction to case

Thermal resistance,

case to sink

RthJC

DC operation

RthCS Mounting surface, smooth, flat and greased

1.00 (1)

1.1 (1)

0.25

0.65 (1)

°C/W

Maximum allowable

mounting torque

(+ 0 %, - 10 %)

Not lubricated thread, tighting on nut (2)

Lubricated thread, tighting on nut (2)

Not lubricated thread, tighting on hexagon (3)

Lubricated thread, tighting on hexagon (3)

3.4 (30)

2.3 (20)

4.2 (37)

3.2 (28)

N·m

(lbf · in)

Approximate weight

17

g

0.6

oz.

Case style

JEDEC

Notes

(1) JEDEC registered values

(2) Recommended for pass-through holes

(3) Recommended for holed threaded heatsinks

DO-203AB (DO-5)

Fig. 1 - Maximum Allowable Case Temperature vs.

Average Forward Current, 1N1183 and 1N3765 Series

Fig. 2 - Typical Low Level Forward Power Loss vs.

Average Forward Current (Sinusoidal Current Waveform),

1N1183 and 1N3765 Series

Document Number: 93492

Revision: 25-May-09

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

3

Share Link: