1N4448(1999) 查看數據表（PDF） - Vishay Semiconductors

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1N4448
(Rev.:1999)

Silicon Epitaxial Planar Diodes

Vishay Semiconductors 

1N4148.1N4448

Vishay Telefunken

Electrical Characteristics

Tj = 25_C

Parameter

Forward voltage

Reverse current

Breakdown voltage

Diode capacitance

Rectification efficiency

Reverse recovery time

Test Conditions

IF=5mA

IF=10mA

IF=100mA

VR=20 V

VR=20 V, Tj=150 °C

VR=75 V

IR=100mA, tp/T=0.01,

tp=0.3ms

VR=0, f=1MHz, VHF=50mV

VHF=2V, f=100MHz

IF=IR=10mA, iR=1mA

W IF=10mA, VR=6V,

iR=0.1xIR, RL=100

Type

1N4448

1N4148

1N4448

Symbol Min Typ Max Unit

VF

VF

VF

IR

IR

IR

V(BR)

0.62

100

0.72 V

1V

1V

25 nA

50 mA

5 mA

V

hCD

r

45

trr

trr

4 pF

%

8 ns

4 ns

Characteristics (Tj = 25_C unless otherwise specified)

1.2

1.0

IF = 100 mA

0.8

10 mA

0.6

1 mA

0.4

0.1 mA

0.2

0

–30

94 9169

0

30

60

90 120

Tj – Junction Temperature ( °C )

Figure 1. Forward Voltage vs. Junction Temperature

1000

100

1 N 4148

10

Scattering Limit

1

0.1

0

94 9170

Tj = 25°C

0.4

0.8

1.2

1.6 2.0

VF – Forward Voltage ( V )

Figure 2. Forward Current vs. Forward Voltage

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2 (4)

Document Number 85521

Rev. 2, 01-Apr-99

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