AD8170ANZ 查看數據表（PDF） - Analog Devices

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AD8170ANZ

250 MHz, 10 ns Switching Multiplexers w/Amplifier

Analog Devices 

AD8170/AD8174

ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6 V

Internal Power Dissipation2

AD8170 8-Lead Plastic (N) . . . . . . . . . . . . . . . . . 1.3 Watts

AD8170 8-Lead Small Outline (R) . . . . . . . . . . . 0.9 Watts

AD8174 14-Lead Plastic (N) . . . . . . . . . . . . . . . . 1.6 Watts

AD8174 14-Lead Small Outline (R) . . . . . . . . . . 1.0 Watts

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± VS

Output Short Circuit Duration . . Observe Power Derating Curves

Storage Temperature Range

N & R Packages . . . . . . . . . . . . . . . . . . . . –65°C to +125°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C

NOTES

1Stresses above those listed under “Absolute Maximum Ratings” may cause

permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated in

the operational section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

2Specification is for device in free air: 8-Pin Plastic Package: θJA = 90°C/Watt;

8-Pin SOIC Package: θJA = 160°C/Watt; 14-Pin Plastic Package: θJA = 90°C/Watt

14-Pin SOIC Package: θJA = 120°C/Watt, where PD = (TJ–TA)/θJA.

ORDERING GUIDE

Model

Temperature

Range

Package

Description

Package

Option

AD8170AN

–40°C to +85°C 8-Pin Plastic DIP N-8

AD8170AR

–40°C to +85°C 8-Pin SOIC

SO-8

AD8170AR-REEL –40°C to +85°C Reel 8-Pin SOIC SO-8

AD8174AN

–40°C to +85°C 14-Pin Plastic DIP N-14

AD8174AR

–40°C to +85°C 14-Pin Narrow SOIC R-14

AD8174AR-REEL –40°C to +85°C Reel 14-Pin SOIC R-14

AD8170-EB

Evaluation Board For AD8170R

AD8174-EB

Evaluation Board For AD8174R

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the

AD8170 and AD8174 is limited by the associated rise in

junction temperature. The maximum safe junction temperature

for plastic encapsulated devices is determined by the glass

transition temperature of the plastic, approximately +150°C.

Exceeding this limit temporarily may cause a shift in parametric

performance due to a change in the stresses exerted on the die

by the package. Exceeding a junction temperature of +175°C

for an extended period can result in device failure.

While the AD8170 and AD8174 are internally short circuit

protected, this may not be sufficient to guarantee that the maxi-

mum junction temperature (+150°C) is not exceeded under all

conditions. To ensure proper operation, it is necessary to observe

the maximum power derating curves shown in Figures 2 and 3.

2.0

8-PIN MINI-DIP PACKAGE

TJ = +150°C

1.5

1.0

8-PIN SOIC PACKAGE

0.5

0

–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90

AMBIENT TEMPERATURE – °C

Figure 2. AD8170 Maximum Power Dissipation vs.

Temperature

2.5

TJ = +150°C

2.0

14-PIN DIP PACKAGE

1.5

14-PIN SOIC

1.0

0.5

–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90

AMBIENT TEMPERATURE – °C

Figure 3. AD8174 Maximum Power Dissipation vs.

Temperature

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the AD8170/AD8174 feature proprietary ESD protection circuitry, permanent damage

may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

–4–

REV. 0

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