MT46V16M8TG-8 查看數據表（PDF） - Micron Technology

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MT46V16M8TG-8

DOUBLE DATA RATE (DDR) SDRAM

Micron Technology 

PRELIMINARY

128Mb: x4, x8, x16

DDR SDRAM

PIN DESCRIPTIONS (continued)

TSOP PIN NUMBERS SYMBOL

51

16, 51

DQS

LDQS, UDQS

TYPE

I/O

3, 9, 15, 55, 61

6, 12, 52, 58, 64

1, 18, 33

34, 48, 66

49

14, 17, 19, 25,

42, 43, 53

50

VDDQ

VSSQ

VDD

VSS

VREF

NC

DNU

Supply

Supply

Supply

Supply

Supply

–

–

DESCRIPTION

Data Strobe: Output with read data, input with write data. DQS is

edge-aligned with read data, centered in write data. It is used to

capture data. For the x16 , LDQS is DQS for DQ0-DQ7 and UDQS is

DQS for DQ8-DQ15. Pin 16 is NC on x4 and x8.

DQ Power Supply: +2.5V ±0.2V. Isolated on the die for improved

noise immunity.

DQ Ground. Isolated on the die for improved noise immunity.

Power Supply: +2.5V ±0.2V.

Ground.

SSTL_2 reference voltage.

No Connect: These pins should be left unconnected.

Do Not Use: Must float to minimize noise.

RESERVED NC PINS1

TSOP PIN NUMBERS

42

17

SYMBOL

A12

A13

TYPE

I

I

DESCRIPTION

Address input for 256Mb and 512Mb devices.

Address input for 1Gb devices.

NOTE: 1. NC pins not listed may also be reserved for other uses now or in the future. This table simply defines specific NC pins

deemed to be of importance.

128Mb: x4, x8, x16 DDR SDRAM

128Mx4x8x16DDR_C.p65 – Rev. C; Pub. 4/01

8

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2001, Micron Technology, Inc.

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