1N5811U02B 查看數據表（PDF） - STMicroelectronics
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1N5811U02B Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
1N5811U
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
VRRM Repetitive peak reverse voltage
150
IF(RMS) Forward rms current
10
IF(AV) Average forward rectified current
Tc = 135 °C, δ = 0.5
6
IFSM Forward surge current
tp = 8.3 ms sinusoidal
105
tp = 10 ms sinusoidal
100
Tstg
Storage temperature range
-65 to + 175
Tj
Maximum operating junction temperature
175
Tsol
Maximum soldering temperature (1)
245
1. Maximum duration 5 s. The same package must not be resoldered until 3 minutes have elapsed.
Table 3. Thermal resistance
Symbol
Rth (j-c) (1) Junction to case
1. Package mounted on infinite heatsink
Parameter
Value
6.5
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min.
IR (1) Reverse current
VF (2) Forward voltage
1. Pulse test : tp = 5 ms, δ < 2%
2. Pulse test : tp = 680 µs, δ < 2%
Tj = 25 °C
Tj = 125 °C
VR = 150 V
-
-
Tj = 25 °C
Tj = -65 °C
VR = 160 V
-
-
Tj = 25 °C IF = 3 A
-
Tj = 25 °C
-
Tj = 125 °C IF = 4 A
-
Tj = -65 °C
-
Tj = 25 °C IF = 6 A
-
To evaluate the conduction losses use the following equation:
P = 0.68 x IF(AV) + 0.03 IF2(RMS )
Typ.
-
-
-
-
-
-
-
-
-
Max.
2
30
10
10
865
900
800
1075
955
Unit
V
A
A
A
°C
°C
°C
Unit
°C/W
Unit
µA
µA
mV
2/7
Doc ID 16005 Rev 2
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