1N5811U 查看數據表（PDF） - STMicroelectronics
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1N5811U Datasheet PDF : 7 Pages
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1N5811U
Characteristics
Table 5.
Symbol
Dynamic characteristics
Parameter
Test conditions
Min. Typ Max. Unit
tRR Reverse recovery time
IF = IR = 1 A, IRR = 0.1 A, dI/dt = -100 A/µs, (min)
IF = 1 A, Vr = 30 V, dI/dt = -50 A/µs,
VFP Forward recovery voltage IFM = 500 mA
tFR Forward recovery time IFM = 500 mA, VFR = 1.1 x VF
Cj Diode capacitance
VR = 10 V, F = 1 MHz
30
ns
35
2.2 V
15 ns
60 pF
Figure 1. Forward voltage drop versus
forward current (typical values)
IFM(A)
20
18
16
14
12
10
8
6
4
2
0
0.0
0.2
Tj=125 °C
Tj=25 °C
0.4
0.6
0.8
Tj=-65 °C
VFM(V)
1.0
1.2
1.4
Figure 2. Forward voltage drop versus
forward current (maximum values)
IFM(A)
20
18
16
14
12
10
Tj=125 °C
8
6
Tj=-65 °C
Tj=25 °C
4
2
VFM(V)
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 3.
Reverse leakage current versus
reverse voltage applied
(typical values)
IR(µA)
1.E+01
1.E+00
Tj=125 °C
1.E-01
Tj=75 °C
1.E-02
1.E-03
0
Tj= 25 °C
VR(V)
20
40
60
80
100 120 140 160
Figure 4.
Relative variation of thermal
impedance, junction to case,
versus pulse duration
Zth(j-c)/Rth(j-c)
1.0
LCC2B
0.9
0.8
0.7
0.6
0.5
0.4
0.3 Single pulse
0.2
0.1
0.0
1.E-05
1.E-04
1.E-03
tP(s)
1.E-02
1.E-01
1.E+00 1.E+01
Doc ID 16005 Rev 2
3/7
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