1N5818WB 查看數據表（PDF） - Electronics Industry
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1N5818WB Datasheet PDF : 1 Pages
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1N5817WB - 1N5819WB
PRV : 20 - 40 Volts
IO : 1.0 Ampere
Certificate TH97/10561QM
Certificate TW00/17276EM
SCHOTTKY BARRIER DIODES
SOD-123
2.7
2.6
MECHANICAL DATA :
* Case : SOD-123
* Weight : 0.01 gram (approximately)
* 1N5817WB Marking Code : A0
* 1N5818WB Marking Code : ME
* 1N5819WB Marking Code : SR
Absolute Maximum Rating (Ta = 25 °C)
Parameter
DC Reverse Voltage
Average Rectified Output Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
1N5817WB
1N5818WB
1N5819WB
3.9
3.7
Dimensions in millimeters
Symbol
VR
IO
Ptot
TJ
TSTG
Value
20
30
40
1.0
450
-55 to + 150
-55 to + 150
Unit
V
A
mW
°C
°C
Electrical Characteristics (Ta = 25 °C )
Parameter
Symbol Min
Reverse Breakdown Voltage
1N5817WB
20
at IR = 1 mA
1N5818WB
VBR
30
1N5819WB
40
Reverse Leakage Current
Forward Voltage
at VR = 20 V 1N5817WB
-
at VR = 30 V 1N5818WB
-
at VR = 40 V 1N5819WB
IR
-
at VR = 4 V 1N5819WB
-
at VR = 6 V 1N5819WB
-
at IF = 0.1 A 1N5819WB
-
at IF = 1.0 A 1N5817WB
-
1N5818WB
-
1N5819WB
VF
-
at IF = 3.0 A 1N5817WB
-
1N5818WB
-
1N5819WB
-
Diode Capacitance at VR = 4 V, f = 1MHz
CD
-
Page 1 of 1
Typ
Max
Unit
-
-
-
-
V
-
-
-
1
-
1
-
1
mA
-
0.050
-
0.075
-
0.45
-
0.45
-
0.55
-
0.60
V
-
0.750
-
0.875
-
0.900
-
120
pF
Rev. 01 : August 22, 2006
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