1N5818S 查看數據表（PDF） - Galaxy Semi-Conductor
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1N5818S Datasheet PDF : 2 Pages
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RATINGS AND CHARACTERISTIC CURVES
1N5817S - - - 1N5819S
FIG.1 -- FORWARD DERATING CURVE
1.0
0.75
0.5 Resistive or
Inductive Load
0.375"(9.5mm)Lead
0.25 Length
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE,
FIG.2 -- PEAK FORWARD SURGE CURRENT
30
25
20
25
10
5
0
1
TJ=TJMAX
8.3ms Single Half
Sine-Wave
10
100
NUMBER OF CYCLES AT 60Hz
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
X -CHARACTERISTICS
20
10
1N5817S
1N5819S
1
1N5818S
.1
.1 .3
.5 .7
TJ=25
Pulse w idth=300 s
1% D uty C ycle
.9 1.1 1.3 1.5 1.7 1.9 2.1
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
400
TJ=25℃
f=1.0MHz
Vsig=50mVp-p
100
10
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
Document Number 0266038
BLGALAXY ELECTRICAL
www.galaxycn.com
2.
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