1N60 查看數據表（PDF） - Unisonic Technologies
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1N60 Datasheet PDF : 8 Pages
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UNISONIC TECHNOLOGIES CO., LTD
1N60
1.2 Amps, 600 Volts
N-CHANNEL MOSFET
1
Power MOSFET
TO- 251
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) =9.3Ω@VGS = 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1
TO - 252
1
TO-220
1
TO-220F
*Pb-free plating product number: 1N60L
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
Package
1N60-TA3-T
1N60L-TA3-T
TO-220
1N60-TF3-T
1N60L-TF3-T
TO-220F
1N60-TM3-T
1N60L-TM3-T
TO-251
1N60-TN3-R
1N60L-TN3-R
TO-252
1N60-TN3-T
1N60L-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
Tube
1N60L-TA 3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN 3: TO-252
(3) L: Lead Free Plating, Blank: Pb/Sn
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