1N60L-TM3-T 查看數據表（PDF） - Unisonic Technologies

零件编号

产品描述 (功能)

生产厂家

1N60L-TM3-T

1.2 Amps, 600 Volts N-CHANNEL MOSFET

Unisonic Technologies 

1N60

Power MOSFET

ELECTRICAL CHARACTERISTICS (Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

Switching Characteristics

Turn-On Delay Time

tD (ON)

Rise Time

Turn-Off Delay Time

tR VDD=300V, ID=1.2A, RG=50Ω

tD (OFF) (Note 1,2)

Fall Time

tF

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics

QG

QGS

VDS=480V, VGS=10V, ID=1.2A

(Note 1,2)

QGD

Drain-Source Diode Forward Voltage

VSD VGS=0V, ISD = 1.2A,

Continuous Drain-Source Current

ISD

Pulsed Drain-Source Current

ISM

Reverse Recovery Time

Reverse Recovery Charge

tRR VGS=0V, ISD = 1.2A

QRR di/dt = 100A/µs (Note1)

Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%

2. Essentially Independent of Operating Temperature

MIN TYP MAX UNIT

5 20 ns

25 60 ns

7 25 ns

25 60 ns

5.0 6.0 nC

1.0

nC

2.6

nC

1.4 V

1.2 A

4.8 A

160

ns

0.3

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 8

QW-R502-052,D

Share Link: