1N60-TN3-R 查看數據表（PDF） - Unisonic Technologies
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1N60-TN3-R Datasheet PDF : 8 Pages
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1N60
TYPICAL PERFORMANCE CHARACTERISTICS
Power MOSFET
Output Characteristics
100
V GS
Top: 15.0V
10 .0V
8 .0V
7 .0V
6 .5V
6 .0V
Bottorm :5.5V
10-1
10-2
10-1
250μs Pulse Test
TC=25℃
100
101
Drain-Source Voltage, VDS (V)
Transfer Characteristics
VDS=50V
250μs Pulse Test
100
125℃
25℃
-40℃
10-1
2
4
6
8
10
Gate-Source Voltage, VGS (V)
On-Resistance vs. Drain Current
30 TJ=25℃
25
20
VGS=10V
VGS=20V
15
10
5
0
0.0 0.5 1.0
1.5
2.0 2.5
Drain Current, ID (A)
Source- Drain Diode Forward Voltage
VGS=0V
250μs Pulse Test
100
125℃ 25℃
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
Capacitance vs. Drain-Source Voltage
200
150
100
Ciss
Coss
Ciss=CGS+CGD
(CDS=shorted)
Coss=CDS+CGD
Crss=CGD
50
Crss
VGS=0V
f = 1MHz
0
10-1
100
101
VDS, Drain-SourceVoltage (V)
Gate Charge vs. Gate-Source Voltage
12
VDS=120V
10
VDS=300V
VDS=480V
8
6
4
2
0
0
1
2
3
ID=1.2A
4
5
Total Gate Charge, QG (nC)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-052,D
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