1N60L-TA3-R 查看數據表（PDF） - Unisonic Technologies
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1N60L-TA3-R Datasheet PDF : 8 Pages
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1N60
TYPICAL PERFORMANCE CHARACTERISTICS(cont.)
Power MOSFET
Breakdown Voltage vs. Temperature
1.2 VGS=0V
ID=250μA
1.1
1.0
0.9
0.8
-100 -50 0
50 100 150 200
Junction Temperature, TJ (℃)
On-Resistance vs. Temperature
3.0 VGS=10V
2.5 ID=0.6A
2.0
1.5
1.0
0.5
0.0
-100 -50 0
50 100 150 200
Junction Temperature, TJ (℃)
Max. Safe Operating Area
Operation in This Area
101
is Limited by RDS(on)
100μs
1ms
100
10ms
DC
10-1
Tc=25℃
TJ=150℃
10-2 Single Pulse
100
101
102
103
Drain-Source Voltage, VDS (V)
Max. Drain Current vs. Case Temperature
1.2
0.9
0.6
0.3
0.0
25
50
75
100 125 150
Case Temperature, TC (℃)
Thermal Response
D=0.5
100
0.2
0.1 0.05
0.02
10-1 0.01
Single pulse
θJC (t) = 3.13℃/W Max.
Duty Factor, D=t1/t2
TJM -TC=PDM×θJC (t)
PDM
t1
t2
10-5 10-4 10-3 10-2 10-1 100 101
Square Wave Pulse Duration, t1 (sec)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-052,D
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