1N6097R 查看數據表（PDF） - Naina Semiconductor ltd.
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1N6097R Datasheet PDF : 2 Pages
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Naina Semiconductor Ltd.
Features
• Fast Switching
• Low forward voltage drop
• High surge capability
• High efficiency, low power loss
• Normal and Reverse polarity
Schottky Power Diode, 50A
1N6097 thru
1N6098R
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter
Test Conditions
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, half-sine wave
TC ≤ 100oC
TC = 25oC
Forward voltage
Reverse current
IF = 50 A
TJ = 25oC
VR = 30V, TJ = 25oC
VR = 30V, TJ = 125oC
Symbol
VRRM
VRMS
VDC
IF
IFSM
VF
IR
1N6097(R)
30
21
30
50
400
0.7
5
250
1N6098(R)
40
28
40
50
400
0.7
5
250
Units
V
V
V
A
A
V
mA
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters
Symbol
Maximum thermal resistance, junction to case
Operating junction temperature range
Storage temperature
Rth(JC)
TJ
Tstg
Mounting torque (non-lubricated threads)
F
Approximate allowable weight
W
1N6097(R)
1N6098(R)
1.0
-65 to 150
-65 to 175
4.0
17.0
Units
oC/W
oC
oC
Nm
g
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
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