1N65A 查看數據表（PDF） - Unisonic Technologies
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1N65A Datasheet PDF : 9 Pages
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1N65A
TYPICAL CHARACTERISTICS
Output Characteristics
VGS
Top: 15.0V
10.0V
100
8.0V
7.0V
6.0V
5.5V
5V
Bottorm:4.5V
4.5V
10-1
100
250μs Pulse Test
TC=25°C
101
Drain-Source Voltage, VDS (V)
On-Resistance vs. Drain Current
30 TJ=25°C
25
VGS=10V
20
VGS=20V
15
10
5
0
0.0 0.5
1.0
1.5
2.0
2.5
Drain Current, ID (A)
Capacitance vs. Drain-Source Voltage
200
CISS=CGS+CGD
(CDS=shorted)
150
CISS
COSS=CDS+CGD
CRSS=CGD
COSS
100
50
CRSS
VGS=0V
0 f = 1MHz
10-1
100
101
Drain-SourceVoltage, VDS (V)
Power MOSFET
Transfer Characteristics
VDS=50V
250μs Pulse Test
100
10-1
2
4
6
8
10
Gate-Source Voltage, VGS (V)
Source- Drain Diode Forward Voltage
VGS=0V
250μs Pulse Test
100
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
Gate Charge vs. Gate-Source Voltage
12
10
VDS=520V
VDS=300V
VDS=120V
8
6
4
2
0
ID=1.0A
0
2
4
6
8
10
Total Gate Charge, QG (nC)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 9
QW-R502-584.D
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