1N6817R 查看數據表（PDF） - Microsemi Corporation

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产品描述 (功能)

生产厂家

1N6817R

LOW REVERSE LEAKAGE SCHOTTKY DIODE

Microsemi Corporation 

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

1N6817

(MSASC25W100K)

Features

1N6817R

• Tungsten schottky barrier

• Oxide passivated structure

(MSASC25W100KR)

• Guard ring protection for increased reverse energy capability

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

• Very low thermal resistance

• Available as standard polarity (strap is anode: 1N6817) and reverse

100 Volts

25 Amps

polarity (strap is cathode: 1N6817R)

• TXV-level screening (MSASC25W100KV) or S-level (MSASC25W100KS)

LOW REVERSE

screening i.a.w. Microsemi internal procedure PS11.50 available

LEAKAGE

Maximum Ratings @ 25°C (unless otherwise specified)

SCHOTTKY DIODE

DESCRIPTION

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current, Tc≤ 145°C

derating, forward current, Tc≥ 145°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz

Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction to Case:

1N6817

1N6817R

SYMBOL

VRRM

VRWM

VR

IF(ave)

dIF/dT

IFSM

IRRM

Tj

Tstg

θJC

MAX.

100

100

100

25

(3.3)

120

2

-55 to +175

-55 to +175

1.25

1.35

UNIT

Volts

Volts

Volts

Amps

Amps/°C

Amps

Amp

°C

°C

°C/W

Datasheet# MSC1034B August, 2000

Mechanical Outline

ThinKey™2

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