1N6817R 查看數據表（PDF） - Microsemi Corporation

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1N6817R

LOW REVERSE LEAKAGE SCHOTTKY DIODE

Microsemi Corporation 

1N6817

(MSASC25W100K)

1N6817R

(MSASC25W100KR)

Electrical Parameters

DESCRIPTION

SYMBOL

CONDITIONS

MIN

Reverse (Leakage)

IR25

VR= 100 Vdc, Tc= 25°C

Current

IR125

VR= 100 Vdc, Tc= 125°C

Forward Voltage

VF1

IF= 5A, Tc= 25°C

pulse test,

VF2

IF= 10A, Tc= 25°C

pw= 300 µs

VF3

IF= 20A, Tc= 25°C

d/c≤ 2%

VF4

IF= 50A, Tc= 25°C

VF7

IF= 100A, TC= 25°C

VF5

IF= 20A, Tc= -55°C

VF6

IF= 20A, Tc= 125°C

Junction Capacitance

Cj1

VR= 10 Vdc

Cj2

VR= 5 Vdc

Breakdown Voltage

BVR

IR= 1 mA, Tc= 25°C

100

IR= 1 mA, Tc= -55°C

100

TYP.

7

2.5

650

730

810

940

1060

925

670

370

500

120

MAX

300

15

725

810

900

1020

-

1025

800

500

UNIT

µA

mA

mV

mV

mV

mV

mV

mV

mV

pF

pF

V

V

Datasheet# MSC1034B August, 2000

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