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1PS76SB62

Schottky barrier diode

Philips Electronics 

Philips Semiconductors

Schottky barrier diode

Product specification

1PS76SB62

FEATURES

• Ultra high switching speed

• Very low capacitance

• High breakdown voltage

• Guard ring protected

• Two pin very small plastic SMD package.

APPLICATIONS

• Ultra high-speed switching

• High frequency applications.

DESCRIPTION

Epitaxial Schottky barrier diode encapsulated in a

SOD323 (SC-76) very small plastic SMD package.

ESD sensitive device, observe handling precautions.

PINNING

PIN

1

2

DESCRIPTION

cathode

anode

olumns

1

2

Marking code: S6.

MGU328

Fig.1 Simplified outline (SOD323; SC-76) and

symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

VR

IF

Tstg

Tj

Tamb

continuous reverse voltage

continuous forward current

storage temperature

junction temperature

operating ambient temperature

MIN.

−

−

−65

−

−65

MAX.

40

20

+150

125

+125

UNIT

V

mA

°C

°C

°C

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

Note

1. Pulse test: pulse width = 300 µs; δ = 0.02.

CONDITIONS

IF = 2 mA; see Fig.2; note 1

VR = 40 V; see Fig.3; note 1

VR = 0 V; f = 1 MHz; see Fig.4

MAX.

800

1

0.6

UNIT

mV

µA

pF

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Refer to SOD323 (SC-76) standard mounting conditions.

VALUE

450

UNIT

K/W

2001 Feb 16

2

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