1PS70SB82,115 查看數據表（PDF） - NXP Semiconductors.

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1PS70SB82,115

Schottky barrier (double) diodes

NXP Semiconductors. 

NXP Semiconductors

Schottky barrier (double) diodes

Product data sheet

1PS70SB82; 1PS70SB84;

1PS70SB85; 1PS70SB86

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

Per diode

VR

continuous reverse voltage

IF

continuous forward current

Tstg

storage temperature

Tj

junction temperature

MIN.

MAX.

UNIT

−

15

V

−

30

mA

−65

+150

°C

−

125

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Refer to (SOT323; SC-70) standard mounting conditions.

VALUE

625

UNIT

K/W

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C; unless otherwise specified.

SYMBOL

PARAMETER

Per diode

VF

forward voltage

rD

differential diode forward resistance

IR

continuous reverse current

Cd

diode capacitance

Note

1. Pulsed test: tp = 300 μs; δ = 0.02.

CONDITIONS

TYP.

see Fig.6

IF = 1 mA

−

IF = 30 mA

−

f = 1 MHz; IF = 5 mA; see Fig.9 12

VR = 1 V; note 1; see Fig.7

−

VR = 0; f = 1 MHz; see Fig.8

1

MAX.

340

700

−

0.2

−

UNIT

mV

mV

Ω

μA

pF

2001 Jan 18

3

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