1SMB5 查看數據表（PDF） - ON Semiconductor

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1SMB5

600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional

ON Semiconductor 

1SMB5.0AT3G Series, SZ1SMB5.0AT3G Series

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms

PPK

600

W

DC Power Dissipation @ TL = 75C Measured Zero Lead Length (Note 2)

Derate Above 75C

Thermal Resistance from Junction−to−Lead

PD

RqJL

3.0

W

40

mW/C

25

C/W

DC Power Dissipation (Note 3) @ TA = 25C

Derate Above 25C

Thermal Resistance from Junction−to−Ambient

PD

RqJA

0.55

W

4.4

mW/C

226

C/W

Forward Surge Current (Note 4) @ TA = 25C

IFSM

100

A

Operating and Storage Temperature Range

TJ, Tstg

−65 to +150

C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. 10 X 1000 ms, non−repetitive.

2. 1 in square copper pad, FR−4 board.

3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A)

Symbol

Parameter

IPP

VC

VRWM

IR

VBR

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,

non−repetitive duty cycle.

I

IF

VC VBR VRWM

IIRT VF

V

IPP

Uni−Directional TVS

http://onsemi.com

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