1SS119 查看數據表（PDF） - Renesas Electronics

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1SS119

Silicon Epitaxial Planar Diode for High Speed Switching

Renesas Electronics 

1SS119

Absolute Maximum Ratings

Item

Peak reverse voltage

Reverse voltage

Average rectified current

Peak forward current

Non-Repetitive peak forward surge current

Power dissipation

Junction temperature

Storage temperature

Note: Within 1s forward surge current.

VRM

VR

IO

IFM

IFSM *

Pd

Tj

Tstg

Symbol

Value

35

30

150

450

1

250

175

−65 to +175

(Ta = 25°C)

Unit

V

V

mA

mA

A

mW

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test Condition

Forward voltage

VF

—

—

0.8

V

IF = 10 mA

Reverse current

IR

—

—

0.1

µA VR = 30 V

Capacitance

C

—

—

3.0

pF VR = 1 V, f = 1 MHz

Reverse recovery time trr *

—

—

3.5

ns IF = 10 mA, VR = 6 V, RL = 50 Ω

Note: Reverse recovery time test circuit

DC

Supply

Ro = 50 Ω

Pulse

Generator

0.1 µF

3 kΩ

Sampling

Oscilloscope

Rin = 50 Ω

Trigger

Rev.3.00 Mar 23, 2005 page 2 of 4

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