1SS226 查看數據表（PDF） - Toshiba
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1SS226 Datasheet PDF : 3 Pages
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS226
1SS226
Ultra High Speed Switching Application
z Small package
: SC-59
z Low forward voltage
: VF (3) = 0.9V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 0.9pF (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300 (*)
mA
Average forward current
IO
100 (*)
mA
Surge current (10ms)
IFSM
2 (*)
A
Power dissipation
P
150
mW
Junction temperature
Tj
125
°C
JEDEC
TO−236MOD
Storage temperature range
Tstg
−55~125
°C
EIAJ
TOSHIBA
SC−59
1−3G1G
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.012g
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Unit rating. Total rating = Unit rating × 0.7.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 30V
― VR = 80V
― VR = 0, f = 1MHz
― IF = 10mA (Fig.1)
Min Typ. Max Unit
― 0.60 ―
― 0.72 ―
V
― 0.90 1.20
―
―
0.1
μA
―
―
0.5
―
0.9 3.0
pF
―
1.6 4.0
ns
Marking
1
2007-11-01
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