1SS294S,LF 查看數據表（PDF） - Toshiba
零件编号
产品描述 (功能)
生产厂家
1SS294S,LF Datasheet PDF : 3 Pages
| |||
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS294
Low Voltage High Speed Switching
z Low forward voltage
z Low reverse surrent
z Small package
: VF (3) = 0.54V (typ.)
: IR = 5μA (max)
: SC−59
1SS294
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
45
V
Reverse voltage
VR
40
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
Power dissipation
P
150
mW
Junction temperature
Storage temperature range
Tj
125
°C
JEDEC
TO−236MOD
EIAJ
Tstg
−55~125
°C
TOSHIBA
SC−59
1−3G1B
Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.012g
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 40V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.54 0.60
―
―
5
μA
―
18
25
pF
Marking
1
2007-11-01
Share Link: 