1SS307(TE85L,F) 查看數據表（PDF） - Toshiba
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1SS307(TE85L,F) Datasheet PDF : 3 Pages
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS307
General Puropose Rectifier Applications
Low forward voltage
Low reverse current
Small total capacitance
Small package
: VF = 1.0V (typ.)
: IR = 10nA (max)
: CT = 3.0pF (typ.)
: SC−59
1SS307
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
35
V
Reverse voltage
VR
30
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
Surge current (10ms)
IFSM
1
A
Power dissipation
P
150
mW
Junction temperature
Tj
125
°C
JEDEC
TO−236MOD
Storage temperature
Tstg
−55 to 125
°C
JEITA
SC−59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-3F1S
Weight: 12 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF
IR
CT
Test Condition
IF = 100mA
VR = 30V
VR = 0V, f = 1MHz
Min Typ. Max Unit
―
1.0
1.3
V
―
―
10
nA
―
3.0
6.0
pF
Marking
Start of commercial production
1988-05
1
2017-10-30
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