1SS348 查看數據表（PDF） - Toshiba
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1SS348 Datasheet PDF : 3 Pages
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS348
Low Voltage High Speed Switching
1SS348
Unit: mm
z Low forward voltage
z Low reverse current
z Small package
: VF (3) = 0.56V (typ.)
: IR = 5μA (max)
: SC-59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Power dissipation
VRM
VR
IFM
IO
P
85
V
80
V
300
mA
100
mA
200
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55~125
°C
Operating Temperature
Topr
−40~100
°C
JEDEC
TD-236MOD
Note: Using continuously under heavy loads (e.g. the application of high EIAJ
SC-59
temperature/current/voltage and the significant change in
TOSHIBA
1-3G1B
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.012g
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 80V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.26 ―
― 0.34 ―
V
― 0.56 0.70
―
―
5
μA
―
45 100 pF
Marking
1
2007-11-01
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