1SS368 查看數據表（PDF） - Toshiba
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1SS368 Datasheet PDF : 3 Pages
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS368
Ultra High Speed Switching Application
1SS368
Unit: mm
Small package
Low forward voltage
: VF (3) = 0.98V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capacitance : CT = 0.5pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse voltage
VRM
85
Reverse voltage
VR
80
Maximum (peak) forward current
IFM
200
Average forward current
IO
100
Surge current (10ms)
IFSM
1
Power dissipation
P
150 *
Junction temperature
Tj
125
Storage temperature range
Tstg
−55∼125
* : Mounted on a glass epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Unit
V
V
mA
mA
A
JEDEC
―
mW
EIAJ
―
°C
TOSHIBA
1-1F1A
°C
Weight: 1.9mg
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 30V
― VR = 80V
― VR = 0, f = 1MHz
― IF = 10mA, Fig.1
Min Typ. Max Unit
― 0.62 ―
― 0.75 ―
V
― 0.98 1.20
―
―
0.1
µA
―
―
0.5
―
0.5
3.0
pF
―
1.6 4.0
ns
1
2001-06-07
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