1SS370 查看數據表（PDF） - Toshiba
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1SS370 Datasheet PDF : 3 Pages
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS370
High Voltage, High Speed Switching Applications
z Low forward voltage
: VF (2) = 0.9V (typ.)
z Fast reverse recovery time : trr = 60ns (max)
z Small total capacitance : CT = 1.5pF (typ.)
z Small package
: SC-70
1SS370
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
250
V
200
V
300
mA
100
mA
2
A
100
mW
125
°C
−55 to 125
°C
JEDEC
―
JEITA
SC−70
TOSHIBA
1-2P1D
Weight: 0.006g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 10mA
― IF = 100mA
― VR = 50V
― VR = 200V
― VR = 0, f = 1MHz
― IF = 10mA, Fig.1
Min Typ. Max Unit
― 0.72 1.0
V
― 0.90 1.2
―
―
0.1
μA
―
―
1.0
―
1.5 3.0
pF
―
10
60
ns
Start of commercial production
1993-09
1
2014-03-01
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